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arXiv · 1902.06348

Laser slicing: a thin film lift-off method for GaN-on-GaN technology

Vladislav Voronenkov·Natalia Bochkareva·Ruslan Gorbunov·Andrey Zubrilov·Viktor Kogotkov·Philipp Latyshev·Yuri Lelikov·Andrey Leonidov·Yuri Shreter
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Abstract

A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial structure. GaN film with a thickness of 5 $\mu$m and an InGaN LED epitaxial device structure was lifted off a GaN substrate and transferred onto a copper substrate. The electroluminescence of the LED chip after the laser slicing lift-off was demonstrated.

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Vladislav Voronenkov, Natalia Bochkareva, Ruslan Gorbunov, Andrey Zubrilov, Viktor Kogotkov, Philipp Latyshev, Yuri Lelikov, Andrey Leonidov, Yuri Shreter. 2019-02-17. Laser slicing: a thin film lift-off method for GaN-on-GaN technology. https://doi.org/10.1016/j.rinp.2019.102233

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