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arXiv · 1903.10688

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory

Sweety Deswal·Rupali R. Malode·Ashok Kumar·Ajeet Kumar
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Abstract

A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) in Al/Niobium oxide/Pt resistive switching devices. Three levels of control over the QC-states, required for multilevel quantized state memories, like, switching ON to different quantized states, switching OFF from quantized states, and controlled inter-state switching among one QC states to another has been demonstrated by imposing limiting conditions of stop-voltage and current compliance. The well defined multiple QC-states along with a working principle for switching among various states show promise for implementation of multilevel memory devices.

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Sweety Deswal, Rupali R. Malode, Ashok Kumar, Ajeet Kumar. 2019-03-26. Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory. https://doi.org/10.1039/c9ra00726a

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