Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction

Yue Niu; Riccardo Frisenda; Eduardo Flores; Jose R. Ares; Weicheng Jiao; David Perez de Lara; Carlos Sanchez; Rongguo Wang; Isabel J. Ferrer; Andres Castellanos-Gomez

doi:10.1002/adom.201800351

arXiv · 1903.11705

Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction

Yue Niu·Riccardo Frisenda·Eduardo Flores·Jose R. Ares·Weicheng Jiao·David Perez de Lara·Carlos Sanchez·Rongguo Wang·Isabel J. Ferrer·Andres Castellanos-Gomez

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Abstract

The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here we demonstrate the fabrication of a monolithic polarization sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p-n junction. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350 % and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization sensitive systems such as polarimeters.

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Yue Niu, Riccardo Frisenda, Eduardo Flores, Jose R. Ares, Weicheng Jiao, David Perez de Lara, Carlos Sanchez, Rongguo Wang, Isabel J. Ferrer, Andres Castellanos-Gomez. 2020-09-22. Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction. https://doi.org/10.1002/adom.201800351

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