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arXiv · 1908.00097

Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate

Jaroslaw Wrobel·Gilberto Umana-Membreno·Jacek Boguski·Dariusz Sztenkiel·Pawel Piotr Michalowski·Piotr Martyniuk·Lorenzo Faraone·Jerzy Wrobel·Antoni Rogalski
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Abstract

High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic field. The layer homogenity and dopant concentration has been proofed via HR-SIMS. The results shew four channel conductivity and essential splitting of the most populated holelike channel below 55 K. The multilayer model concluded from the QMSA results has been compared with nextnano simulation.

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Jaroslaw Wrobel, Gilberto Umana-Membreno, Jacek Boguski, Dariusz Sztenkiel, Pawel Piotr Michalowski, Piotr Martyniuk, Lorenzo Faraone, Jerzy Wrobel, Antoni Rogalski. 2019-07-31. Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate. https://arxiv.org/abs/1908.00097

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