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arXiv · 1908.05853

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm

Sandeep Kumar·Sandeep Vura·Surani B. Dolmanan·Sudhiranjan Tripathy·R. Muralidharan·Digbijoy N. Nath
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Abstract

We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by utilizing a gate recess with length and depth of 200 nm and 124 nm respectively. The recess etched region had a roughness of 0.7 nm. Various recess etch depths and dielectric annealing conditions were used to tune the VTH. The optimized device exhibited on-current and VTH of 500 mA/mm and 5 V respectively. The measured breakdown characteristics of the devices and their limitations were investigated using 2D-TCAD device simulation. The penetration of the residual electric field in most of the recess region could be the reason for the premature breakdown of deeply scaled recess-gate e-mode HEMTs.

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Sandeep Kumar, Sandeep Vura, Surani B. Dolmanan, Sudhiranjan Tripathy, R. Muralidharan, Digbijoy N. Nath. 2019-08-16. Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm. https://arxiv.org/abs/1908.05853

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