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arXiv · 1908.06578

Robust Ultraviolet to Near-infrared Quantum Emitters in Hexagonal Boron Nitride up to 1100 K

Qing-Hai Tan·Jia-Min Lai·Xue-Lu Liu·Yong-Zhou Xue·Xiu-Ming Dou·Bao-Quan Sun·Wei-Bo Gao·Ping-Heng Tan·Jun Zhang
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Abstract

A stable single-photon source working at high temperatures with high brightness and covering full band emission from one host material is critically important for quantum technologies. Here, we find that the certain hBN single-photon emissions (SPEs) can be significantly enhanced by lasers with special wavelengths, which largely broaden the wavelength range of the hBN emitters, down to ultraviolet (357 nm) and up to near-infrared (912 nm). Importantly, these hBN SPEs are still stable even at the temperature up to 1100 Kelvin. The decoupling between single-photon and acoustic phonon is observed at high temperatures. Our work suggests that hBN can be a good host material for generating single-photon sources with ultrabroad wavelength range.

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BibTeXRIS

Qing-Hai Tan, Jia-Min Lai, Xue-Lu Liu, Yong-Zhou Xue, Xiu-Ming Dou, Bao-Quan Sun, Wei-Bo Gao, Ping-Heng Tan, Jun Zhang. 2019-08-19. Robust Ultraviolet to Near-infrared Quantum Emitters in Hexagonal Boron Nitride up to 1100 K. https://arxiv.org/abs/1908.06578

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