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arXiv · 1909.08690

Mechanism for Embedded In-plane Self Assembled Nanowire Formation

Nathaniel S Wilson·Stephan Kraemer·Daniel J. Pennachio·Patrick Callahan·Mihir Pendharkar·Christopher J Palmstrøm
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Abstract

We report a novel growth mechanism that produces in-plane [1-10] oriented ErSb nanowires formed during codeposition of Er0.3Ga0.7Sb via molecular beam epitaxy (MBE). Nanowires are characterized by in-situ scanning tunneling microscopy (STM), as well as ex-situ transmission electron microscopy (TEM) and electron channeling contrast imaging (ECCI). We show that complexes of macrosteps with step heights on the order of 7 nm form during nanowire growth. The macrosteps are shown to be part of the in-plane nanowire growth process and are directly responsible for the observed stratified distribution of in-plane nanowires. TEM indicates that initial growth results in out-of-plane nanowires transitioning to in-plane nanowires after a critical film thickness. A surface energy model is put forward that shows the critical thickness is due to minimization of the GaSb{110} surfaces formed during out-of-plane nanowire growth. Kinetics of the transition are discussed with respect to observed features in STM, along with the material parameters needed to achieve in-plane nanowire growth.

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Nathaniel S Wilson, Stephan Kraemer, Daniel J. Pennachio, Patrick Callahan, Mihir Pendharkar, Christopher J Palmstrøm. 2019-09-18. Mechanism for Embedded In-plane Self Assembled Nanowire Formation. https://doi.org/10.1103/physrevmaterials.4.066003

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