Search arXivSearch

arXiv · 1910.00497

Intelligent Metasurface Imager and Recognizer

Abstract

It is ever-increasingly demanded to remotely monitor people in daily life using radio-frequency probing signals. However, conventional systems can hardly be deployed in real-world settings since they typically require objects to either deliberately cooperate or carry a wireless active device or identification tag. To accomplish the complicated successive tasks using a single device in real time, we propose a smart metasurface imager and recognizer simultaneously, empowered by a network of artificial neural networks (ANNs) for adaptively controlling data flow. Here, three ANNs are employed in an integrated hierarchy: transforming measured microwave data into images of whole human body; classifying the specifically designated spots (hand and chest) within the whole image; and recognizing human hand signs instantly at Wi-Fi frequency of 2.4 GHz. Instantaneous in-situ imaging of full scene and adaptive recognition of hand signs and vital signs of multiple non-cooperative people have been experimentally demonstrated. We also show that the proposed intelligent metasurface system work well even when it is passively excited by stray Wi-Fi signals that ubiquitously exist in our daily lives. The reported strategy could open a new avenue for future smart cities, smart homes, human-device interactive interfaces, healthy monitoring, and safety screening free of visual privacy issues.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Lianlin Li, Ya Shuang, Qian Ma, Haoyang Li, Hanting Zhao, Menglin Wei1, Che Liu, Chenglong Hao, Cheng-Wei Qiu, Tie Jun Cui. 2019-09-02. Intelligent Metasurface Imager and Recognizer. https://arxiv.org/abs/1910.00497

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph