Electrical and Spectroscopic Properties of SiC Detectors

Mykola Brynza; Eduard Belas; Petr Praus; Jindrich Pipek; Roman Grill

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arXiv · 2001.03351

Electrical and Spectroscopic Properties of SiC Detectors

Mykola Brynza·Eduard Belas·Petr Praus·Jindrich Pipek·Roman Grill

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Abstract

In this paper we compare suitability of three different semi-insulating bulk silicon carbide (SiC) materials for fabrication of radiation detectors. We prepared planar sensors with various metal contact combination and characterized detector quality by the alpha spectroscopy and I-V characteristic measurements. We observed that 4H-SiC material from the II-VI company is not suitable for radiation detector fabrication due to high concentration of vanadium doping. We also present a poor charge collection efficiency of the 4H-SiC Norstel material due to high concentration of residual impurities and we evaluated low mobility-lifetime product (alpha)= 3.5E-7 cm2/V from the alpha spectroscopy. We demonstrate that the 4H-SiC material from the Cree company is the best candidate for the production of radiation detectors. We evaluated mobility-lifetime product (alpha)= 5.4E-6 cm2/V using AuTi/SiC/TiAu contact structure.

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Mykola Brynza, Eduard Belas, Petr Praus, Jindrich Pipek, Roman Grill. 2020-01-10. Electrical and Spectroscopic Properties of SiC Detectors. https://arxiv.org/abs/2001.03351

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