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arXiv · 2001.05063

Plasmonic Titanium Nitride via Atomic Layer Deposition: A Low-Temperature Route

Dhruv Fomra·Ray Secondo·Kai Ding·Vitaliy Avrutin·Natalia Izyumskaya·Ümit Özgür·Nathaniel Kinsey
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Abstract

To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved at temperatures below 500{\deg}C, by exploring the effects of chemisorption time, substrate temperature and plasma exposure time on material properties. Reduction in chemisorption time mitigates premature precursor decomposition at T_S > 375{\deg}C , and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450{\deg}C, compatible with CMOS processes, with 0.5s chemisorption time and 25s plasma exposure exhibited a high plasmonic figure of merit (|{\epsilon}^'/{\epsilon}^''|) of 2.8 and resistivity of 31 {\mu}{\Omega}-cm. These TiN thin films fabricated with subwavelength apertures were shown to exhibit extraordinary transmission.

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Dhruv Fomra, Ray Secondo, Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Nathaniel Kinsey. 2019-10-14. Plasmonic Titanium Nitride via Atomic Layer Deposition: A Low-Temperature Route. https://doi.org/10.1063/1.5130889

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