Effect of high temperature annealing (T > 1650{\deg}C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Monia Spera; Domenico Corso; Salvatore Di Franco; Giuseppe Greco; Andrea Severino; Patrick Fiorenza; Filippo Giannazzo; Fabrizio Roccaforte

doi:10.1016/j.mssp.2019.01.019

arXiv · 2001.08021

Effect of high temperature annealing (T > 1650{\deg}C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Monia Spera·Domenico Corso·Salvatore Di Franco·Giuseppe Greco·Andrea Severino·Patrick Fiorenza·Filippo Giannazzo·Fabrizio Roccaforte

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Abstract

This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30 - 200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 1020 at/cm3. The implanted samples were annealed at high temperatures (1675-1825 {\deg}C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775{\deg}C, while this increase becomes more significant at 1825{\deg}C (RMS=1.2nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65-1.34x1018/cm3 and mobility values in the order of 21-27 cm2V-1s-1. The temperature dependent electrical measurements allowed to estimate an activation energy of the Al-implanted specie of about 110 meV (for the post-implantation annealing at 1675{\deg}C) and a fraction of active p-type Al-dopant ranging between 39% and 56%. The results give useful indications for the fabrication of 4H-SiC JBS and MOSFETs.

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Monia Spera, Domenico Corso, Salvatore Di Franco, Giuseppe Greco, Andrea Severino, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte. 2020-01-22. Effect of high temperature annealing (T > 1650{\deg}C) on the morphological and electrical properties of p-type implanted 4H-SiC layers. https://doi.org/10.1016/j.mssp.2019.01.019

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