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arXiv · 2002.05344

Simultaneous Generation of Direct- and Indirect-Gap Photoluminescence in Multilayer MoS2 Bubbles

Hailan Luo·Xuanyi Li·Yanchong Zhao·Rong Yang·Yufeng Hao·Yu-nan Gao·Norman N. Shi·Yang Guo·Guodong Liu·Lin Zhao·Qingyan Wang·Zhongshan Zhang·Jiatao Sun·Xingjiang Zhou·Yuan Huang
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Abstract

Transition metal dichalcogenide (TMD) materials have received enormous attention due to their extraodinary optical and electrical properties, among which MoS2 is the most typical one. As thickness increases from monolayer to multilayer, the photoluminescence (PL) of MoS2 is gradually quenched due to the direct-to-indirect band gap transition. How to enhance PL response and decrease the layer dependence in multilayer MoS2 is still a challenging task. In this work, we report, for the first time, simultaneous generation of three PL peaks at around 1.3, 1.4 and 1.8 eV on multilayer MoS2 bubbles. The temperature dependent PL measurements indicate that the two peaks at 1.3 and 1.4 eV are phonon-assisted indirect-gap transitions while the peak at 1.8 eV is the direct-gap transition. Using first-principles calculations, the band structure evolution of multilayer MoS2 under strain is studied, from which the origin of the three PL peaks of MoS2 bubbles is further confirmed. Moreover, PL standing waves are observed in MoS2 bubbles that creates Newton-Ring-like patterns. This work demonstrates that the bubble structure may provide new opportunities for engineering the electronic structure and optical properties of layered materials.

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Hailan Luo, Xuanyi Li, Yanchong Zhao, Rong Yang, Yufeng Hao, Yu-nan Gao, Norman N. Shi, Yang Guo, Guodong Liu, Lin Zhao, Qingyan Wang, Zhongshan Zhang, Jiatao Sun, Xingjiang Zhou, Yuan Huang. 2020-02-13. Simultaneous Generation of Direct- and Indirect-Gap Photoluminescence in Multilayer MoS2 Bubbles. https://doi.org/10.1103/physrevmaterials.4.074006

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