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arXiv · 2003.00513

InSe: a two-dimensional semiconductor with superior flexibility

Qinghua Zhao·Riccardo Frisenda·Tao Wang·Andres Castellanos-Gomez
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Abstract

Two-dimensional Indium Selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young's modulus of thin InSe (~1-2 layers to ~40 layers) flakes experimentally by using buckling-based methodology. We find that the Young's modulus has a value of 23.1 +- 5.2 GPa, one of the lowest values reported up to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics.

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Qinghua Zhao, Riccardo Frisenda, Tao Wang, Andres Castellanos-Gomez. 2020-03-01. InSe: a two-dimensional semiconductor with superior flexibility. https://doi.org/10.1039/c9nr02172h

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