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arXiv · 2004.02826

Bulk and surface electronic states in the dosed semimetallic HfTe$\boldsymbol{_2}$

Zakariae El Youbi·Sung Won Jung·Saumya Mukherjee·Mauro Fanciulli·Jakub Schusser·Olivier Heckmann·Christine Richter·Ján Minár·Karol Hricovini·Matthew D. Watson·Cephise Cacho
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Abstract

The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-resolved photoemission spectroscopy (ARPES), we have investigated the electronic structure of this material as a function of Potassium (K) deposition. From the k$_z$ maps, we observe the appearance of 2D dispersive bands after electron dosing, with an increasing sharpness of the bands, consistent with the wavefunction confinement at the topmost layer. In our highest-dosing cases, a monolayer-like electronic structure emerges, presumably as a result of intercalation of the alkali metal. Here, by bringing the topmost valence band below $E_F$, we can directly measure a band overlap of $\sim$ 0.2 eV. However, 3D bulk-like states still contribute to the spectra even after considerable dosing. Our work provides a reference point for the increasingly popular studies of the alkali metal dosing of semimetals using ARPES.

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Zakariae El Youbi, Sung Won Jung, Saumya Mukherjee, Mauro Fanciulli, Jakub Schusser, Olivier Heckmann, Christine Richter, Ján Minár, Karol Hricovini, Matthew D. Watson, Cephise Cacho. 2020-04-06. Bulk and surface electronic states in the dosed semimetallic HfTe$\boldsymbol{_2}$. https://doi.org/10.1103/physrevb.101.235431

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