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arXiv · 2005.05522

Electronic structure of a 3x3-ordered silicon layer on Al(111)

Y. Sato·Y. Fukaya·M. Cameau·A. K. Kundu·D. Shiga·R. Yukawa·K. Horiba·C. -H. Chen·A. Huang·H. -T. Jeng·T. Ozaki·H. Kumigashira·M. Niibe·I. Matsuda
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Abstract

Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction.

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Y. Sato, Y. Fukaya, M. Cameau, A. K. Kundu, D. Shiga, R. Yukawa, K. Horiba, C. -H. Chen, A. Huang, H. -T. Jeng, T. Ozaki, H. Kumigashira, M. Niibe, I. Matsuda. 2020-05-12. Electronic structure of a 3x3-ordered silicon layer on Al(111). https://doi.org/10.1103/physrevmaterials.4.064005

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