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arXiv · 2006.01343

Tolerance against conducting filament formation in nanosheet-derived titania thin films

Masaya Sato·Masahiro Hara·Asami Funatsu·Ryo Nouchi
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Abstract

Herein, titania thin films are fabricated by a facile liquid-phase method based on vacuum filtration of a colloidal suspension of titania nanosheets, which is followed by thermal annealing to transform the nanosheet film into anatase TiO2. Nanosheet-derived titania thin films exhibit poor resistive switching with an interface-type mechanism. This behaviour is distinct from the filamentary switching that has been observed with titania thin films fabricated by other conventional techniques. This tolerance against conducting-filament formation may be ascribed to a low concentration of oxygen vacancies in nanosheet-derived films, which is expected because of the O/Ti ratio of titania (Ti0.87O2) nanosheets being larger than that of TiO2. Besides, the dielectric breakdown strength of nanosheet-derived films is found to be comparable to or higher than that of titania thin films fabricated by other techniques. These findings clearly indicate the usefulness of nanosheet-derived titania thin films for dielectric applications.

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Masaya Sato, Masahiro Hara, Asami Funatsu, Ryo Nouchi. 2020-06-02. Tolerance against conducting filament formation in nanosheet-derived titania thin films. https://doi.org/10.1088/2632-959x%2Fab9024

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