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arXiv · 2006.08793

A silicon-integrated telecom photon-spin interface

L. Bergeron·C. Chartrand·A. T. K. Kurkjian·K. J. Morse·H. Riemann·N. V. Abrosimov·P. Becker·H. -J. Pohl·M. L. W. Thewalt·S. Simmons
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Abstract

Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon defect with spin-selective optical transitions at 1326 nm in the telecommunications O-band. Here we show that the T center in $^{28}$Si offers electron and nuclear spin lifetimes beyond a millisecond and second respectively, as well as optical lifetimes of 0.94(1) $μ$s and a Debye-Waller factor of 0.23(1). This work represents a significant step towards coherent photonic interconnects between long-lived silicon spins, spin-entangled telecom single-photon emitters, and spin-dependent silicon-integrated photonic nonlinearities for future global quantum technologies.

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L. Bergeron, C. Chartrand, A. T. K. Kurkjian, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, S. Simmons. 2020-06-15. A silicon-integrated telecom photon-spin interface. https://doi.org/10.1103/prxquantum.1.020301

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