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arXiv · 2008.13441

Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

H. Koike·S. Lee·R. Ohshima·E. Shigematsu·M. Goto·S. Miwa·Y. Suzuki·T. Sasaki·Y. Ando·M. Shiraishi
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Abstract

To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.

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H. Koike, S. Lee, R. Ohshima, E. Shigematsu, M. Goto, S. Miwa, Y. Suzuki, T. Sasaki, Y. Ando, M. Shiraishi. 2020-08-31. Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves. https://doi.org/10.35848/1882-0786%2Faba22c

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