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arXiv · 2010.12210

Improvement of HRS Variability in OxRRAM by Tailored Metallic Liner

N. Guillaume·M. Azzaz·S. Blonkowski·E. Jalaguier·P. Gonon·C. Vallée·T. Blomberg·M. Tuominen·H. Sprey·S. Bernasconi·C. Charpin-Nicolle·E. Nowak
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Abstract

In this work, we propose a novel integration in order to significantly reduce the High Resistance State vari-ability and to improve thermal stability in Oxide-based Resistive Random Access Memory (OxRRAM) devices. A novel device featuring a metallic liner, acting as a parallel resistance, is presented. To assess the effect of this solution, we compare the results with a standard OxRRAM cell structure. A very good stability of the resistive states, both in endurance and temperature, is highlighted and explained thanks to a conductive fila-ment based model.

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N. Guillaume, M. Azzaz, S. Blonkowski, E. Jalaguier, P. Gonon, C. Vallée, T. Blomberg, M. Tuominen, H. Sprey, S. Bernasconi, C. Charpin-Nicolle, E. Nowak. 2020-10-23. Improvement of HRS Variability in OxRRAM by Tailored Metallic Liner. https://arxiv.org/abs/2010.12210

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