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arXiv · 2011.13294

Two Dimensional Functionalized Ultrathin Semi Insulating CaF2 Layer on the Si(100) Surface at a Low Temperature for Molecular Electronic Decoupling AH-2083 arXiv submit/3480305

Abstract

The ability to precisely control the electronic coupling/decoupling of adsorbates from surfaces is an essential goal. It isimportant for fundamental studies not only in surface science but alsoin several applied domains including, for example, miniaturizedmolecular electronic or for the development of various devices suchas nanoscale biosensors or photovoltaic cells. Here, we provide atomic-scale experimental and theoretical investigations of a semi-insulatinglayer grown on a silicon surface via its epitaxy with CaF2. We showthat, following the formation of a wetting layer, the ensuing organizedunit cells are coupled to additional physisorbed CaF2molecules,periodically located in their surroundings. This configuration shapesthe formation of ribbons of stripes that functionalize the semi-conductor surface. The obtained assembly, having a monolayerthickness, reveals a surface gap energy of 3.2 eV. The adsorption of iron tetraphenylporphyrin molecules on the ribbons of stripes is used to estimate the electronic insulating properties of thisstructure via differential conductance measurements. Density functional theory (DFT) including several levels of complexity(annealing, DFT +U, and nonlocal van der Waals functionals) is employed to reproduce our experimental observations. Ourfindings offer a unique and robust template that brings an alternative solution to electronic semi-insulating layers on metal surfacessuch as NaCl. Hence, CaF2/Si(100) ribbon of stripe structures, whose lengths can reach more than 100 nm, can be used as aversatile surface platform for various atomic-scale studies of molecular devices.

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Eric Duverger, Anne Gaelle Boyer, Helene Sauriat Dorizon, Philippe Sonnet, Regis Stephan, Marie-Christine Hanf, Damien Riedel. 2020-11-26. Two Dimensional Functionalized Ultrathin Semi Insulating CaF2 Layer on the Si(100) Surface at a Low Temperature for Molecular Electronic Decoupling AH-2083 arXiv submit/3480305. https://arxiv.org/abs/2011.13294

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