Enhancing thermopower and Nernst signal of high-mobility Dirac carriers by Fermi level tuning in the layered magnet EuMnBi$_2$

Keigo Tsuruda; Kento Nakagawa; Masayuki Ochi; Kazuhiko Kuroki; Masashi Tokunaga; Hiroshi Murakawa; Noriaki Hanasaki; Hideaki Sakai

doi:10.1002/adfm.202102275

arXiv · 2105.05816

Enhancing thermopower and Nernst signal of high-mobility Dirac carriers by Fermi level tuning in the layered magnet EuMnBi$_2$

Keigo Tsuruda·Kento Nakagawa·Masayuki Ochi·Kazuhiko Kuroki·Masashi Tokunaga·Hiroshi Murakawa·Noriaki Hanasaki·Hideaki Sakai

View original source ↗Read source document ↗Export metadata ↓

Abstract

Dirac/Weyl semimetals hosting linearly-dispersing bands have received recent attention for potential thermoelectric applications, since their ultrahigh-mobility carriers could generate large thermoelectric and Nernst power factors. To optimize these efficiencies, the Fermi energy needs to be chemically controlled in a wide range, which is generally difficult in bulk materials because of disorder effects from the substituted ions. Here it is shown that the Fermi energy is tunable across the Dirac point for layered magnet EuMnBi$_2$ by partially substituting Gd$^{3+}$ for Eu$^{2+}$ in the insulating block layer, which dopes electrons into the Dirac fermion layer without degrading the mobility. Clear quantum oscillation observed even in the doped samples allows us to quantitatively estimate the Fermi energy shift and optimize the power factor (exceeding 100 $μ$W/K$^2$cm at low temperatures) in combination with the first-principles calculation. Furthermore, it is shown that Nernst signal steeply increases with decreasing carrier density beyond a simple theoretical prediction, which likely originates from the field-induced gap reduction of the Dirac band due to the exchange interaction with the Eu moments. Thus, the magnetic block layer provides high controllability for the Dirac fermions in EuMnBi$_2$, which would make this series of materials an appealing platform for novel transport phenomena.

Explore related subjects

cond-mat.mtrl-sci cond-mat.str-el

Keep this discovery

Explore connections, maps & timelines

BibTeX RIS

Keigo Tsuruda, Kento Nakagawa, Masayuki Ochi, Kazuhiko Kuroki, Masashi Tokunaga, Hiroshi Murakawa, Noriaki Hanasaki, Hideaki Sakai. 2021-05-12. Enhancing thermopower and Nernst signal of high-mobility Dirac carriers by Fermi level tuning in the layered magnet EuMnBi$_2$. https://doi.org/10.1002/adfm.202102275

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Towards ultra-scaled nanoelectronics using the zipper material system $Bi_2O_2Se/Bi_2SeO_5$

Two-dimensional (2D) materials could overcome the scaling bottleneck of nanoelectronics by enabling atomically thin channels, superior electrostatic control, and reduced short-channel effects. However, progress is limited by the lack of semiconductor–insulator interfaces being simultaneously scalable, stable, and reliable. Conventional 2D interfaces are often low quality or require transferring dissimilar materials, limiting reproducibility and scalability. We show that the zipper heterostructure formed by the high-mobility 2D semiconductor Bi 2 O 2 Se and its native high- κ oxide Bi 2 SeO 5 addresses these challenges, providing an atomically sharp, chemically matched interface with excellent electrostatics and promising scaling potential. We further present the first comprehensive multiscale assessment of Bi 2 O 2 Se/Bi 2 SeO 5 transistors targeting thermal stability, reliability, and scalability by linking atomic-scale structure and defects to device-level behavior across four transistor generations (top-gated, fin, and two gate-all-around architectures). Benchmarking against IRDS-2035 targets indicates that Bi 2 O 2 Se/Bi 2 SeO 5 devices could deliver high drive current with low gate leakage under aggressive scaling, potentially surpassing the targets in the upper-bound region of the sensitivity analysis. Finally, we identify oxygen-related oxide defects as the dominant origin of hysteresis consistent with a beneficial role of encapsulation and oxygen-rich annealing. Together, our findings support the potential of this zipper material system as a technologically-credible and manufacturing-relevant platform for future nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2026

Influence of Heterogeneity on the Response of Architected Metamaterials

Architected metamaterials like foams and lattices exhibit complex responses governed by microstructural instabilities, localization, and phase-transition-like phenomena. Their behavior is further affected by heterogeneities inherent in their microstructure often caused through manufacturing processes. In this study we extend a gradient-enhanced, nonlocal continuum formulation to incorporate stochastic material heterogeneity through Gaussian random fields imposed on selected constitutive parameters. The framework enables independent control of both the amplitude and spatial correlation of material fluctuations while preserving thermodynamic consistency and regularization of localization. It also introduces a characteristic lengthscale ratio between the nonlocal and correlation lengthscales, that enables modeling at the limit of random or spatially correlated microstructures. Finite element simulations of confined compression and indentation show that heterogeneity fundamentally alters phase nucleation, localization morphology, and macroscopic response. Overall, the proposed framework provides a unified approach for linking stochastic material variability to instability-driven mechanics in architected metamaterials, enabling improved understanding of imperfection sensitivity, stability and design. It showcases how heterogeneity alone can influence characteristic features of the response, such as stability, slope of the plateau region, and elimination of the initial elastic regime.

cond-mat.mtrl-sci↗

arXiv2026

Structural, electronic, and optical properties of hexagonal GeSn from density functional theory

Unlike cubic GeSn, which undergoes an indirect-to-direct bandgap transition only above a finite Sn concentration, lonsdaleite (2H) germanium is an intrinsic direct-gap semiconductor. We employ first-principles density functional theory to investigate the structural, electronic, and optical properties of 2H-Ge$_{1-x}$Sn$_{x}$ random alloys in the dilute Sn regime ($x \le 0.10$). Substitutional disorder is modeled using 48-atom special quasirandom structure (SQS) supercells, and the coherent effective band structure is recovered via spectral band unfolding. We show that the semiconducting alloy configurations retain a direct bandgap at the $Γ$ point, with a moderate, nearly linear reduction of the bandgap in the dilute regime that shifts the fundamental absorption edge toward the mid-infrared. As the gap approaches zero, its calculated value becomes increasingly sensitive to the atomic configuration and supercell size. Evaluation of the optical transition matrix elements shows that the polarization anisotropy characteristic of pristine 2H-Ge remains observable under dilute Sn alloying. Although alloy disorder relaxes the crystal selection rules, the band edge response remains dominated by light polarized perpendicular to the crystal $c$ axis, whereas the parallel component remains weaker. These results identify dilute hexagonal GeSn as a tunable direct-gap system with a strongly polarization-dependent optical response in the infrared.

cond-mat.mtrl-sci↗