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arXiv · 2110.03863

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Xiaohan Wu·Ruijing Ge·Yuqian Gu·Emmanuel Okogbue·Jianping Shi·Abhay Shivayogimath·Peter Bøggild·Timothy J. Booth·Yanfeng Zhang·Yeonwoong Jung·Jack C. Lee·Deji Akinwande
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Abstract

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements.

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Xiaohan Wu, Ruijing Ge, Yuqian Gu, Emmanuel Okogbue, Jianping Shi, Abhay Shivayogimath, Peter Bøggild, Timothy J. Booth, Yanfeng Zhang, Yeonwoong Jung, Jack C. Lee, Deji Akinwande. 2021-10-08. Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect. https://doi.org/10.1109/edtm50988.2021.9420947

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