Efficient spin current source using a half-Heusler alloy topological semimetal with Back-End-of-Line compatibility

Abstract

Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle ($θ_{SH}$ > 1) is limited to a few chalcogenide TIs with toxic elements and low melting points, making them challenging for device integration during the silicon Back-End-of-Line (BEOL) process. Here, we show that by using a half-Heusler alloy topological semi-metal (HHA-TSM), YPtBi, it is possible to achieve both a giant $θ_{SH}$ up to 1.6 and a high thermal budget up to 600$°$C. We demonstrate magnetization switching of a CoPt thin film using the giant spin Hall effect of YPtBi by current densities lower than those of heavy metals by one order of magnitude. Since HHA-TSM includes a group of three-element topological materials with great flexibility, our work opens the door to the third-generation spin Hall materials with both high $θ_{SH}$ and high compatibility with the BEOL process that would be easily adopted by the industry.