Topological Anderson insulators induced by random binary disorders

Shu-Na Liu; Guo-Qing Zhang; Ling-Zhi Tang; Dan-Wei Zhang

doi:10.1016/j.physleta.2022.128004

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arXiv · 2202.11905

Topological Anderson insulators induced by random binary disorders

Shu-Na Liu·Guo-Qing Zhang·Ling-Zhi Tang·Dan-Wei Zhang

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Abstract

Different disorders lead to various localization and topological phenomena in condensed matter and artificial systems. Here we study the topological and localization properties in one-dimensional Su-Schrieffer-Heeger model with spatially correlated random binary disorders. It is found that random binary disorders can induce the topological Anderson insulating phase from the trivial insulator in various parameter regions. The topological Anderson insulators are characterized by the disorder-averaged winding number and localized bulk states revealed by the inverse participation ratio in both real and momentum spaces. We show that the topological phase boundaries are consistent with the analytical results of the self-consistent Born approach and the localization length of zero-energy modes, and discuss how the bimodal probability affects the disorder-induced topological phases. The topological characters can be detected from the mean chiral displacement in atomic or photonic systems. Our work provides an extension of the topological Anderson insulators to the case of correlated disorders.

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Shu-Na Liu, Guo-Qing Zhang, Ling-Zhi Tang, Dan-Wei Zhang. 2022-02-28. Topological Anderson insulators induced by random binary disorders. https://doi.org/10.1016/j.physleta.2022.128004

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