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arXiv · 2204.06174

Oxygen Octahedral Tilt Controlled Topological Hall Effect in Epitaxial and Freestanding SrRuO3/SrIrO3 Heterostructures

Zhi Shiuh Lim·Amy Khoong Hong Khoo·Zhou Zhou·Ganesh Ji Omar·Ping Yang·Robert Laskowski·Ariando Ariando
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Abstract

The fabrication technique of freestanding oxide flakes by epitaxial lift-off has made significant contributions to the multifunctional oxide thin film research. Several highly impactful work have recently demonstrated the robustness of freestanding oxide flakes retaining their desirable properties after detachment from the substrate by dissolving away the water-soluble Sr3Al2O6 buffer layer. Firstly, in epitaxial SrRuO3/SrIrO3 systems showing Hall-humps reminiescence of Topological Hall Effect, first-principle calculations revealed that octahedral tilts can modify the sign of Dzyaloshinskii-Moriya interaction and avoid cancellation in a symmetric trilayer structure. Secondly, freestanding flakes of the trilayer is also able to retain the Hall-humps across a wide temperature range. The behaviour of humps' peak field does not vary with field direction rotation away from surface normal, consistent to a micromagnetic simulation result of N\'eel-type magnetic Skyrmions. The layer-resolved octahedral tilts in the freestanding heterostructures also crucially controls the occurrence of Hall-humps, consistent to the insight from the epitaxial ones. This work offers a new perspective to understanding Hall-humps in perovskite oxides, as well as demonstrates the fabrication of oxide heterostructure membranes with high interfacial quality.

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Zhi Shiuh Lim, Amy Khoong Hong Khoo, Zhou Zhou, Ganesh Ji Omar, Ping Yang, Robert Laskowski, Ariando Ariando. 2022-04-13. Oxygen Octahedral Tilt Controlled Topological Hall Effect in Epitaxial and Freestanding SrRuO3/SrIrO3 Heterostructures. https://arxiv.org/abs/2204.06174

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