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arXiv · 2207.12679

Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve

Qihong Wu·Rongkun Liu·Zhanjun Qiu·Dengfeng Li·Jie Li·Xiaotian Wang·Guangqian Ding
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Abstract

Two-dimensional ferromagnetic (FM) half-metals are promising candidates for advanced spintronic devices with small-size and high-capacity. Motivated by recent report on controlling synthesis of FM Cr$_3$Te$_4$ nanosheet, herein, to explore the potential application in spintronics, we designed spintronic devices based on Cr$_3$X$_4$ (X=Se, Te) monolayers and investigated their spin transport properties. We found that Cr$_3$Te$_4$ monolayer based device shows spin filtering and dual spin diode effect when applying bias voltage, while Cr$_3$S$_4$ monolayer is an excellent platform to realize a spin valve. The different transport properties are primarily ascribed to the semiconducting spin channel, which is close to and away from the Fermi level in Cr$_3$Te$_4$ and Cr$_3$Se$_4$ monolayers, respectively. Interestingly, the current in monolayer Cr$_3$Se$_4$ based device also displays a negative differential resistance effect (NDRE) and a high magnetoresistance ratio (up to 2*10$^3$). Moreover, we found thermally induced spin filtering effect and NDRE in Cr$_3$Se$_4$ junction when applying temperature gradient instead of bias voltage. These theoretical findings highlight the potential of Cr$_3$X$_4$ (X=Se, Te) monolayers in spintronic applications and put forward realistic materials to realize nanosale spintronic device.

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Qihong Wu, Rongkun Liu, Zhanjun Qiu, Dengfeng Li, Jie Li, Xiaotian Wang, Guangqian Ding. 2022-07-26. Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve. https://doi.org/10.1039/d2cp03615k

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