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arXiv · 2208.10427

Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well

Zijin Lei·Erik Cheah·Filip Krizek·Rüdiger Schott·Thomas Bähler·Peter Märki·Werner Wegscheider·Mansour Shayegan·Thomas Ihn·Klaus Ensslin
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Abstract

Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density.

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Zijin Lei, Erik Cheah, Filip Krizek, Rüdiger Schott, Thomas Bähler, Peter Märki, Werner Wegscheider, Mansour Shayegan, Thomas Ihn, Klaus Ensslin. 2022-08-22. Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well. https://doi.org/10.1103/physrevresearch.5.013117

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