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arXiv · 2209.11437

Temperature and terahertz frequency dependence of the dielectric properties of Fe3O4 thin films deposited on Si substrate

Ashish Khandelwal·L. S. Sharath Chandra·Shilpam Sharma·Archna Sagdeo·J. Jayabalan·R. J. Choudhary·M. K. Chattopadhyay
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Abstract

The Fe$_3$O$_4$/Si films are considered to be promising materials for THz spintronic applications due to their high temperature magnetic transition and semiconducting properties. In this article, we present the real part of the dielectric constant ($ε_1$) and the optical conductivity ($σ_1$) of Fe$_3$O$_4$ films of different thicknesses deposited on Si substrate (Fe$_3$O$_4$/Si) in the THz range at temperatures 2- 300 K. Although the magnetization of the films with thickness $\geq$ 115 nm shows a clear change at the Verwey transition temperature T$_v$ = 121 K, their optical properties in the THz frequency range are drastically different from each other. We have shown that $σ_1$ is maximum and $ε_1$ is minimum when the Fe$^{+2}$/Fe$^{+3}$ ratio is equal to 0.54 which is the ratio of Fe+2/Fe+3 for pure Fe$_3$O$_4$. The $σ_1$ reduces and $ε_1$ increases at all temperatures when the Fe$^{+2}$/Fe$^{+3}$ ratio deviates from 0.54. We have shown that a slight change in the Fe$^{+2}$/Fe$^{+3}$ ratio can induce large changes in the optical properties which shall have implications in the application of the Fe3O4 films in THz spintronics.

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Ashish Khandelwal, L. S. Sharath Chandra, Shilpam Sharma, Archna Sagdeo, J. Jayabalan, R. J. Choudhary, M. K. Chattopadhyay. 2022-09-23. Temperature and terahertz frequency dependence of the dielectric properties of Fe3O4 thin films deposited on Si substrate. https://arxiv.org/abs/2209.11437

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