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arXiv · 2210.04753

Establishing Epitaxial Connectedness in Multi-Stacking: The Survival of Thru-Holes in Thru-Hole Epitaxy

Youngjun Lee·Seungjun Lee·Jaewu Choi·Chinkyo Kim·Young-Kyun Kwon
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Abstract

Thru-hole epitaxy has recently been reported to be able to grow readily detachable domains crystallographically aligned with the underlying substrate over 2D mask material transferred onto a substrate. [Jang \textit{et al.}, \textit{Adv. Mater. Interfaces}, \textbf{2023} \textit{10}, 4 2201406] While the experimental demonstration of thru-hole epitaxy of GaN over multiple stacks of $h$-BN was evident, the detailed mechanism of how small holes in each stack of $h$-BN survived as thru-holes during multiple stacking of $h$-BN was not intuitively clear. Here, we use Monte Carlo simulations to investigate the conditions under which holes in each stack of 2D mask layers can survive as thru-holes during multiple stacking. If holes are highly anisotropic in shape by connecting smaller holes in a particular direction, thru-holes can be maintained with a high survival rate per stack, establishing more epitaxial connectedness. Our work verifies and supports that thru-hole epitaxy is attributed to the epitaxial connectedness established by thru-holes surviving even through multiple stacks.

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Youngjun Lee, Seungjun Lee, Jaewu Choi, Chinkyo Kim, Young-Kyun Kwon. 2023-08-22. Establishing Epitaxial Connectedness in Multi-Stacking: The Survival of Thru-Holes in Thru-Hole Epitaxy. https://doi.org/10.1002/adem.202301654

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