Temperature dependence of radiation damage annealing of Silicon Photomultipliers

Abstract

The last decade has increasingly seen the use of silicon photomultipliers (SiPMs) instead of photomultiplier tubes (PMTs). This is due to various advantages of the former on the latter like its smaller size, lower operating voltage, higher detection efficiency, insensitivity to magnetic fields and mechanical robustness to launch vibrations. All these features make SiPMs ideal for use on space based experiments where the detectors require to be compact, lightweight and capable of surviving launch conditions. A downside with the use of this novel type of detector in space conditions is its susceptibility to radiation damage. In order to understand the lifetime of SiPMs in space, both the damage sustained due to radiation as well as the subsequent recovery, or annealing, from this damage have to be studied. Here we present these studies for three different types of SiPMs from the Hamamatsu S13360 series. Both their behaviour after sustaining radiation equivalent to 2 years in low earth orbit in a typical mission is presented, as well as the recovery of these detectors while stored in different conditions. The storage conditions varied in temperature as well as in operating voltage. The study found that the annealing depends significantly on the temperature of the detectors with those stored at high temperatures recovering significantly faster and at recovering closer to the original performance. Additionally, no significant effect from a reasonable bias voltage on the annealing was observed. Finally the annealing rate as a function of temperature is presented along with various operating strategies for the future SiPM based astrophysical detector POLAR-2 as well as for future SiPM based space borne missions.