Thickness Dependent Itinerant Ferromagnetism in Ultrathin Ba-Doped SrRuO3 films

Zeeshan Ali; Mohammad Saghayezhian; Prahald Siwakoti; Roshan Nepal; Jiandi Zhang

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arXiv · 2212.12120

Thickness Dependent Itinerant Ferromagnetism in Ultrathin Ba-Doped SrRuO3 films

Zeeshan Ali·Mohammad Saghayezhian·Prahald Siwakoti·Roshan Nepal·Jiandi Zhang

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Abstract

The electronic and magnetic properties in ABO3 perovskite oxides are extremely sensitive to lattice structure but also the dimensionality, such as the thickness in thin film form. Here, we report the thickness-dependent electro-magnetic properties of ultrathin epitaxially stabilized Sr1-xBaxRuO3 (x = 0.08, 0.2) thin films on SrTiO3 (001) substrate. The results reveal that the Ba-doping (0.08 < x < 0.20) reduces RuO6 orthorhombic distortions existing in SrRuO3 and induces a tetragonal distortion as evidenced by out-of-plane lattice expansion. A metal-to-insulator transition, accompanied by a ferromagnetic to non-magnetic transition occurs with reducing film thickness from 10 to 3 unit-cell (u.c.) for both x = 0.08 and 0.2, regardless of the doping level. The results suggest that the effects of compositional vacancies and surface/interface contributions introduced via dimensional confinement are more dominant than A-site chemical disorder or structural distortion for the loss of metallicity and ferromagnetism in ultra-thin epitaxial films.

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Zeeshan Ali, Mohammad Saghayezhian, Prahald Siwakoti, Roshan Nepal, Jiandi Zhang. 2022-12-23. Thickness Dependent Itinerant Ferromagnetism in Ultrathin Ba-Doped SrRuO3 films. https://arxiv.org/abs/2212.12120

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