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arXiv · 2303.00296

Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator

Shailja Sharma·Shiv Kumar·Amit Kumar·Kenya Shimada·C. S. Yadav
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Abstract

The structural, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented. Temperature dependent resistivity exhibits metallic behavior with a slope change above 200 K for Ag-doped Bi2Se3. The magnetoresistance shows positive quadratic dependence at low fields satisfying Kohler's rule. Hall resistivity measurement shows that electrons are dominant charge carriers. Furthermore, these results agree well with the ARPES spectra observed at T = 20 K, where the Fermi level lies inside the bulk conduction band. The Dirac point of the topological surface states is shifted toward higher binding energy (~ 0.12 eV) for Ag-doped samples as compared to pristine Bi2Se3.

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Shailja Sharma, Shiv Kumar, Amit Kumar, Kenya Shimada, C. S. Yadav. 2023-03-01. Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator. https://doi.org/10.1063/5.0102131

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