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arXiv · 2306.04914

Unlocking the Potential of GeS Monolayer: Strain-Enabled Control of Electronic Transports and Exciton Radiative Lifetimes

Vo Khuong Dien·Pham Thi Bich Thao·Nguyen Thi Han·Nguyen Duy Khanh·Le Vo Phuong Thuan·Ming-Fa Lin·Nguyen Thanh Tien
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Abstract

Monolayer germanium sulfide is gaining significant attention for its exceptional anisotropic electronic conductance, notable excitonic effects, and wide range of potential applications. In our study, we used density functional theory, many-body perturbation theory, and non-equilibrium Green function to investigate electronic transport properties and exciton radiative lifetime of single-layer germanium sulfide. Our theoretical findings showed that applying up to 8 percent compressive strain increased carrier mobility by nearly threefold, and thus, dramatically enhance the device's current intensity. Moreover, we observed that strain engineering allowed fine-tuning of the electron-hole recombination time. At 6 percent tensile strain, the effective radiative lifetime was as short as 19 picoseconds, which is 4.5 times faster than the intrinsic state and 80 times faster than at 8 percent compressive strain. These results highlight the potential of strain engineering to customize the electronic and optical properties of GeS monolayer for specific electronic, optoelectronic, and photovoltaic device requirements

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Vo Khuong Dien, Pham Thi Bich Thao, Nguyen Thi Han, Nguyen Duy Khanh, Le Vo Phuong Thuan, Ming-Fa Lin, Nguyen Thanh Tien. 2023-06-11. Unlocking the Potential of GeS Monolayer: Strain-Enabled Control of Electronic Transports and Exciton Radiative Lifetimes. https://arxiv.org/abs/2306.04914

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