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arXiv · 2307.09802

Magneto-transport and electronic structures in MoSi$_2$ bulks and thin films with different orientations

W. Afzal·F. Yun·Z. Li·Z. Yue·W. Zhao·L. Sang·G. Yang·Y. He·G. Peleckis·M. Fuhrer·X. Wang
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Abstract

We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi$_2$ single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi$_2$ thin films is significantly low and nearly independent of the temperature, which is important for electronic devices.

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W. Afzal, F. Yun, Z. Li, Z. Yue, W. Zhao, L. Sang, G. Yang, Y. He, G. Peleckis, M. Fuhrer, X. Wang. 2023-07-19. Magneto-transport and electronic structures in MoSi$_2$ bulks and thin films with different orientations. https://arxiv.org/abs/2307.09802

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