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arXiv · 2308.06074

Growth of aligned and twisted hexagonal boron nitride on Ir(110)

Thomas Michely·Jason Bergelt·Affan Safeer·Alexander Bäder·Tobias Hartl·Jeison Fischer
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Abstract

The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. We find that the growth of aligned single hexagonal boron nitride on Ir(110) requires a growth temperature of 1500 K, whereas lower growth temperatures result in coexistence of aligned h-BN with twisted h-BN The presence of the h-BN overlayer suppresses the formation of the nano-faceted ridge pattern known from clean Ir(110). Instead, we observe the formation of a (1 $\times$ n) reconstruction, with n such that the missing rows are in registry with the h-BN/Ir(110) moiré pattern. Our moiré analysis showcases a precise methodology for determining both the moiré periodicity and the h-BN lattice parameter on an fcc(110) surface.

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Thomas Michely, Jason Bergelt, Affan Safeer, Alexander Bäder, Tobias Hartl, Jeison Fischer. 2023-08-11. Growth of aligned and twisted hexagonal boron nitride on Ir(110). https://doi.org/10.1088/2053-1583%2Fad064a

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