Composition-dependent absorption of radiation in semiconducting MSi2Z4 Monolayers

Abstract

The recent synthesis of MoSi2N4 material, along with theoretical predictions encompassing the entire family of chemical analogs, has opened up a new array of low-dimensional materials for a diverse range of optoelectronics and photovoltaics applications. In this study, we conducted state-of-the-art many-body first-principles calculations to analyze the quasi-particle electronic structure of the material class MSi2Z4 (where M = Mo, W, and Z = N, P, As, Sb). All monolayers display a direct band gap at the K point, with the exception of MoSi2N4. In tungsten-based compounds, the fundamental-gap can be adjusted over a significantly broader energy range compared to their molybdenum-based counterparts. Additionally, increasing atomic weight of the Z, both the band gap and exciton binding energies decrease. A noteworthy feature is the absence of a lateral valley (Λ or Q) near the conduction band minimum, indicating potential higher photoluminescence efficiencies compared to conventional transition-metal dichalcogenide monolayers. The optical spectra of these materials are predominantly characterized by tightly bound excitons, leading to an absorption onset in the visible range (for N-based) and in the infrared region (for others). This diversity offers promising opportunities to incorporate these materials and their heterostructures into optoelectronic devices, with tandem solar cells being particularly promising.