Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene WSe2 Heterostructure

Hui-Ying Ren; Yue Mao; Ya-Ning Ren; Qing-Feng Sun; Lin He

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arXiv · 2310.19238

Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene WSe2 Heterostructure

Hui-Ying Ren·Yue Mao·Ya-Ning Ren·Qing-Feng Sun·Lin He

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Abstract

Inducing and controlling electrostatic barriers in two-dimensional (2D) quantum materials has shown extraordinary promise to enable control of charge carriers, and is key for the realization of nanoscale electronic and optoelectronic devices1-10. Because of their atomically thin nature, the 2D materials have a congenital advantage to construct the thinnest possible p-n junctions1,3,7,9,10. To realize the ultimate functional unit for future nanoscale devices, creating atomically wide electrostatic barriers embedded in 2D materials is desired and remains an extremely challenge. Here we report the creation and manipulation of atomically wide electrostatic barriers embedded in graphene WSe2 heterostructures. By using a STM tip, we demonstrate the ability to generate a one-dimensional (1D) atomically wide boundary between 1T-WSe2 domains and continuously tune positions of the boundary because of ferroelasticity of the 1T-WSe2. Our experiment indicates that the 1D boundary introduces atomically wide electrostatic barriers in graphene above it. Then the 1D electrostatic barrier changes a single graphene WSe2 heterostructure quantum dot from a relativistic artificial atom to a relativistic artificial molecule.

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Hui-Ying Ren, Yue Mao, Ya-Ning Ren, Qing-Feng Sun, Lin He. 2023-10-30. Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene WSe2 Heterostructure. https://arxiv.org/abs/2310.19238

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