Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · 2402.12337

Hot carrier distribution engineering by alloying: picking elements for the desired purposes

Matej Bubaš·Jordi Sancho-Parramon
View original source ↗Read source document ↗Export metadata ↓

Abstract

Metal alloys hold the promise of providing hot carrier generation distributions superior to pure metals in applications such as sensing, catalysis and solar energy harvesting. Guidelines for finding the optimal alloy configuration for a target application require understanding the connection between alloy composition and hot carrier distribution. Here we present a DFT-based computational approach to investigate the photo-generated hot carrier distribution of metal alloys based on the joint density of states and the electronic structure. We classified the metals by their electronic structure into closed d-shell, open d-shell, p-block and s-block elements. It is shown that combining closed d-shell elements enables modulating the distribution of highly energetic holes typical of pure metals but also leads to hot carrier production by IR light excitation and the appearance of highly energetic electrons due to band folding and splitting. This feature arises as an emergent property of alloying and is only unveiled when the hot carrier distribution computation takes momentum conservation into account. The combination of closed d-shell with open d-shell elements allows an abundant production of hot carriers in a broad energy range, while alloying a closed d-shell elements with an s-block element opens the door to hot electron distribution skewed toward high energy electrons. The combination of d-shell with p-block elements results in moderate hot carrier distribution whose asymmetry can be tuned by composition. Overall, the obtained insights that connect alloy composition, band structure and resulting carrier distribution provide a toolkit to match elements in an alloy for the deliberate engineering of hot carrier distribution.

Explore related subjects

cond-mat.mtrl-sciphysics.chem-phphysics.optics

Keep this discovery

BibTeXRIS

Matej Bubaš, Jordi Sancho-Parramon. 2024-02-19. Hot carrier distribution engineering by alloying: picking elements for the desired purposes. https://arxiv.org/abs/2402.12337

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci↗
arXiv2026

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci↗
arXiv2026

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci↗