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arXiv · 2403.06630

Hot Carrier Nanowire Transistors at the Ballistic Limit

M. Kumar·A. Nowzari·A. R. Persson·S. Jeppesen·A. Wacker·G. Bastard·R. Wallenberg·F. Capasso·V. F. Maisi·L. Samuelson
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Abstract

We demonstrate experimentally non-equilibrium transport in unipolar quasi-1D hot electron devices reaching ballistic limit. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electron passing the barrier depends exponentially on the transport length with a mean free path of 200 - 260 nm and reaches ballistic transport regime for the shortest devices with 70 % of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector.

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M. Kumar, A. Nowzari, A. R. Persson, S. Jeppesen, A. Wacker, G. Bastard, R. Wallenberg, F. Capasso, V. F. Maisi, L. Samuelson. 2024-03-11. Hot Carrier Nanowire Transistors at the Ballistic Limit. https://doi.org/10.1021/acs.nanolett.4c01197

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