arXiv · 2404.12767
On the Path to High-temperature Josephson Multi-junction Devices
Abstract
We report our progress in the high-temperature superconductor (HTS) Josephson junction fabrication process founded on using a focused helium ion beam damaging technique and discuss the expected device performance attainable with the HTS multi-junction device technology. Both the achievable high value of characteristic voltage $V_c=I_cR_N$ of Josephson junctions and the ability to design a large number of arbitrary located Josephson junctions allow narrowing the existing gap in design abilities for LTS and HTS circuits even with using a single YBCO film layer. A one-layer topology of active electrically small antenna is suggested and its voltage response characteristics are considered.
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Xu Wang, Fucong Chen, Zefeng Lin, Changhong Yuan, Shibing Tian, Chunguang Li, Victor Kornev, Nikolay Kolotinskiy. 2024-04-19. On the Path to High-temperature Josephson Multi-junction Devices. https://doi.org/10.23919/emsci.2024.0009
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