Shadow Mask Molecular Beam Epitaxy for In-Plane Gradient Permittivity Materials

Abstract

Infrared spectroscopy currently requires the use of bulky, expensive, and/or fragile spectrometers. For gas sensing, environmental monitoring, or other applications in the field, an inexpensive, compact, robust on-chip spectrometer is needed. One way to achieve this goal is through gradient permittivity materials, in which the material permittivity changes as a function of position in the plane. In this paper, we demonstrate the synthesis of infrared gradient permittivity materials using shadow mask molecular beam epitaxy. The permittivity of our material changes as a function of position in the lateral direction, allowing us to confine varying wavelengths of infrared light at varying horizontal locations. We see an electric field enhancement corresponding to a wavenumber gradient of ~650 cm$^{-1}$ to 900 cm$^{-1}$ over an in-plane gradient width of ~13 $μ$ m on the flat mesa of our sample. In addition, we see a wavenumber gradient of ~900 cm$^{-1}$ to 1250 cm$^{-1}$ over an in-plane gradient width of ~13 $μ$m on the slope of our sample. These two different wavenumber gradient regions develop on two opposite sides of our material. This demonstration of a scalable method of creating an in-plane gradient permittivity material could be leveraged for the creation of a variety of miniature infrared devices, such as an ultracompact spectrometer.