Parallel-Field Hall effect in ZrTe$_5$

Yongjian Wang; Thomas Boemerich; A. A. Taskin; Achim Rosch; Yoichi Ando

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arXiv · 2408.11113

Parallel-Field Hall effect in ZrTe$_5$

Yongjian Wang·Thomas Boemerich·A. A. Taskin·Achim Rosch·Yoichi Ando

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Abstract

Parallel-field Hall effect is the appearance of a Hall voltage $V_{\rm H}$ that is transverse to the current $I$ when the magnetic field $B$ is applied parallel to $I$ (i.e. $B \parallel I \perp V_{\rm H}$). Such an effect is symmetry forbidden in most cases and hence is very unusual. Interestingly, the existence of a finite parallel-field Hall effect was reported for the layered topological semimetal ZrTe$_5$ and was proposed to be due to Berry curvature. However, it is forbidden for the known symmetry of ZrTe$_5$ and the possible existence of a misaligned out-of-plane magnetic field was not completely ruled out. Here, we elucidate the existence of the parallel-field Hall effect in ZrTe$_5$ with careful magnetic-field alignment. We interpret this result to originate from symmetry breaking and quantitatively explain the observed parallel-field Hall signal by considering a tilting of the Fermi surface allowed by broken symmetry.

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Yongjian Wang, Thomas Boemerich, A. A. Taskin, Achim Rosch, Yoichi Ando. 2024-08-20. Parallel-Field Hall effect in ZrTe$_5$. https://arxiv.org/abs/2408.11113

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