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arXiv · 2409.08902

Polarization Pinning at Antiphase Boundaries in Multiferroic YbFeO$_3$

Guodong Ren·Pravan Omprakash·Xin Li·Yu Yun·Arashdeep S. Thind·Xiaoshan Xu·Rohan Mishra
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Abstract

The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain-walls. We report on the pinning of polarization due to antiphase boundaries in thin films of the multiferroic hexagonal YbFeO$_3$. We have directly resolved the atomic structure of a sharp antiphase boundary (APB) in YbFeO$_3$ thin films using a combination of aberration-corrected scanning transmission electron microscopy (STEM) and total energy calculations based on density-functional theory (DFT). We find the presence of a layer of FeO$_6$ octahedra at the APB that bridge the adjacent domains. STEM imaging shows a reversal in the direction of polarization on moving across the APB, which DFT calculations confirm is structural in nature as the polarization reversal reduces the distortion of the FeO$_6$ octahedral layer at the APB. Such APBs in hexagonal perovskites are expected to serve as domain-wall pinning sites and hinder ferroelectric switching of the domains.

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Guodong Ren, Pravan Omprakash, Xin Li, Yu Yun, Arashdeep S. Thind, Xiaoshan Xu, Rohan Mishra. 2024-10-11. Polarization Pinning at Antiphase Boundaries in Multiferroic YbFeO$_3$. https://doi.org/10.1088/1674-1056%2Fad8cbc

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