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arXiv · 2410.18758

Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices

Chithra H. Sharma·Appanna Parvangada·Lars Tiemann·Kai Rossnagel·Jens Martin·Robert H. Blick
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Abstract

MoS2 has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS2 depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to and the determine the g-factor in micron-scale devices However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS2. Here, we exploit naturally n-doped few-layer MoS2 devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS2 devices. Using RD-ESR, we determine the g-factor of few-layer MoS2 to be ~1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.

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Chithra H. Sharma, Appanna Parvangada, Lars Tiemann, Kai Rossnagel, Jens Martin, Robert H. Blick. 2025-03-24. Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices. https://doi.org/10.1088/1361-648x%2Fadc35d

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