Ultrahigh interfacial thermal conductance for cooling gallium oxide electronics using cubic boron arsenide

Abstract

Gallium oxide (Ga$_2$O$_3$) has attracted significant interest for its unique potential especially in power electronics. However, its low and anisotropic thermal conductivity poses a major challenge for heat dissipation. Here, we explore an effective cooling strategy centering on the heterogeneous integration of $β$-Ga$_2$O$_3$ devices with cubic boron arsenide (cBAs), an emerging material with an ultrahigh thermal conductivity $κ$ of ~1300 Wm$^{-1}$K$^{-1}$. Machine-learned potentials for representative $β$-Ga$_2$O$_3$/cBAs interfaces are trained, enabling accurate and efficient calculation of the interfacial thermal conductance $G$ via nonequilibrium molecular dynamics. At 300 K, remarkable $G$ values of 749$\pm$33 MWm$^{-2}$K$^{-1}$ and 824$\pm$35 MWm$^{-2}$K$^{-1}$ are predicted for Ga-As and O-B bonding across the interface, respectively, which are primarily attributed to the well-matched phonon density of states considering the similar Debye temperatures of $β$-Ga$_2$O$_3$ and cBAs. Moreover, finite-element simulations directly show a notable device temperature reduction when comparing cBAs with other substrates. The simultaneously ultrahigh $κ$ and $G$ highlight cBAs as an ideal substrate for Ga$_2$O$_3$ electronics.