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arXiv · 2502.07357

Floquet-Volkov interference in a semiconductor

Changhua Bao·Haoyuan Zhong·Benshu Fan·Xuanxi Cai·Fei Wang·Shaohua Zhou·Tianyun Lin·Hongyun Zhang·Pu Yu·Peizhe Tang·Wenhui Duan·Shuyun Zhou
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Abstract

Intense light-field can dress both Bloch electrons inside crystals and photo-emitted free electrons in the vacuum, dubbed as Floquet and Volkov states respectively. These quantum states can further interfere coherently, modulating light-field dressed states. Here, we report experimental evidence of the Floquet-Volkov interference in a semiconductor - black phosphorus. A highly asymmetric modulation of the spectral weight is observed for the Floquet-Volkov states, and such asymmetry can be further controlled by rotating the pump polarization. Our work reveals the quantum interference between different light-field dressed electronic states, providing insights for material engineering on the ultrafast timescale.

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Changhua Bao, Haoyuan Zhong, Benshu Fan, Xuanxi Cai, Fei Wang, Shaohua Zhou, Tianyun Lin, Hongyun Zhang, Pu Yu, Peizhe Tang, Wenhui Duan, Shuyun Zhou. 2025-02-11. Floquet-Volkov interference in a semiconductor. https://doi.org/10.1103/physrevb.111.l081106

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