Gate-tunable band-edge in few-layer MoS$_2$

Michele Masseroni; Isaac Soltero; James G. Hugh; Igor Rozhansky; Xue Li; Alexander Schmidhuber; Markus Niese; Takashi Taniguchi; Kenji Watanabe; Vladimir Fal'ko; Thomas Ihn; Klaus Ensslin

arXiv · 2503.03371

Gate-tunable band-edge in few-layer MoS$_2$

Michele Masseroni·Isaac Soltero·James G. Hugh·Igor Rozhansky·Xue Li·Alexander Schmidhuber·Markus Niese·Takashi Taniguchi·Kenji Watanabe·Vladimir Fal'ko·Thomas Ihn·Klaus Ensslin

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Abstract

Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band-edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the $K$-points, whereas in multilayers, they shift to the $Q$-points, midway between the $\Gamma$ and $K$ points. In this study, we conduct magnetotransport experiments to measure the occupation in the $Q$ and $K$ valleys in fourlayer molybdenum disulfide (MoS$_2$). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid $k\cdot p$ tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS$_2$, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs.

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Michele Masseroni, Isaac Soltero, James G. Hugh, Igor Rozhansky, Xue Li, Alexander Schmidhuber, Markus Niese, Takashi Taniguchi, Kenji Watanabe, Vladimir Fal'ko, Thomas Ihn, Klaus Ensslin. 2025-03-05. Gate-tunable band-edge in few-layer MoS$_2$. https://arxiv.org/abs/2503.03371

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