Magnetotransport Properties in Epitaxial Films of Metallic Delafossite PdCoO$_2$: Effects of Thickness and Width Variations in Hall Bar Devices

Abstract

We report on a combined structural and magnetotransport study of Hall bar devices of various lateral dimensions patterned side-by-side on epitaxial PdCoO$_2$ thin films. We study the effects of both the thickness of the PdCoO$_2$ film and the width of the channel on the electronic transport and the magnetoresistance properties of the Hall bar devices. All the films with thicknesses down to 4.88 nm are epitaxially oriented, phase pure, and exhibit a metallic behavior. At room temperature, the Hall bar device with the channel width $\text{W}=2.5\, μ\text{m}$ exhibits a record resistivity value of $0.85\,μΩ$cm, while the value of $2.70\,μΩ$cm is obtained in a wider device with channel width $\text{W}=10\, μ\text{m}$. For the 4.88 nm thick sample, we find that while the density of the conduction electrons is comparable in both channels, the electrons move about twice as fast in the narrower channel. At low temperatures, for Hall bar devices of channel width $2.5\,μ\text{m}$ fabricated on epitaxial films of thicknesses 4.88 and 5.21 nm, the electron mobilities of $\approx$ 65 and 40 cm$^2$V$^{-1}$s$^{-1}$, respectively, are extracted. For thin-film Hall bar devices of width $10\,μ\text{m}$ fabricated on the same 4.88 and 5.21 nm thick samples, the mobility values of $\approx$ 32 and 18 cm$^2$V$^{-1}$s$^{-1}$ are obtained. The magnetoresistance characteristics of these PdCoO$_2$ films are observed to be temperature dependent and exhibit a dependency with the orientation of the applied magnetic field. When the applied field is oriented 90° away from the crystal $c$-axis, a persistent negative MR at all temperatures is observed; whereas when the field is parallel to the $c$-axis, the negative magnetoresistance is suppressed at temperatures above 150K.