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arXiv · 2504.13285

Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN

Hyunmin Cho·Yubo Wang·Chloe Leblanc·Yinuo Zhang·Yunfei He·Zirun Han·Roy H. Olsson III·Deep Jariwala
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Abstract

Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values exceeding 100 uC/cm2. However, their high coercive fields (>3 MV/cm) have limited cycling endurance to ~107 cycles in previous reports. Here, we demonstrate unprecedented control of polarization switching in AlScN, achieving write cycling endurance exceeding 1010 cycles a thousand fold improvement over previous wurtzite ferroelectric benchmarks. Through precise voltage modulation in 45 nm thick Al0.64Sc0.36N capacitors, we show that while complete polarization reversal (2Pr ~ 200 uC/cm2) sustains ~108 cycles, partial switching extends endurance beyond 1010 cycles while maintaining a substantial polarization (>30 uC/cm2 for 2Pr). This exceptional endurance, combined with breakdown fields approaching 10 MV/cm in optimized 10 um diameter devices, represents the highest reported values for any wurtzite ferroelectric. Our findings establish a new paradigm for reliability in nitride ferroelectrics, demonstrating that controlled partial polarization and size scaling enables both high endurance and energy efficient operation.

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Hyunmin Cho, Yubo Wang, Chloe Leblanc, Yinuo Zhang, Yunfei He, Zirun Han, Roy H. Olsson III, Deep Jariwala. 2025-04-17. Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN. https://arxiv.org/abs/2504.13285

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