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arXiv · 2505.09461

Natural layered phlogopite dielectric for ultrathin two-dimensional optoelectronics

Thomas Pucher·Julia Hernandez-Ruiz·Guillermo Tajuelo-Castilla·José Ángel Martín-Gago·Carmen Munuera·Andres Castellanos-Gomez
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Abstract

The integration of high-dielectric-constant (high-$\kappa$) materials with two-dimensional (2D) semiconductors is promising to overcome performance limitations and reach their full theoretical potential. Here we show that naturally occurring phlogopite mica, exfoliated into ultrathin flakes, can serve as a robust high-$\kappa$ dielectric layer for transition metal dichalcogenide-based 2D electronics and optoelectronics. Phlogopite's wide bandgap (~4.8 eV), high dielectric constant (~11), and large breakdown field (10 MVcm$^{-1}$) enable transistors with subthreshold swings down to 100 mVdec$^{-1}$, minimal hysteresis (30-60 mV) and interface trap densities comparable to state-of-the-art oxide dielectrics. Moreover, phototransistors built upon monolayer molybdenum disulfide (MoS$_2$) and phlogopite exhibit responsivities up to 3.3x10$^{4}$ AW$^{-1}$ and detectivities near 10$^{10}$ Jones, surpassing devices based on conventional gate insulators. We further demonstrate the versatility of this natural dielectric by integrating phlogopite/MoS$_2$ heterostructures into NMOS inverters, showcasing robust voltage gains and low-voltage operation. Our findings establish phlogopite as a promising, earth-abundant dielectric for next-generation 2D transistor technologies and high-performance photodetection.

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Thomas Pucher, Julia Hernandez-Ruiz, Guillermo Tajuelo-Castilla, José Ángel Martín-Gago, Carmen Munuera, Andres Castellanos-Gomez. 2025-05-14. Natural layered phlogopite dielectric for ultrathin two-dimensional optoelectronics. https://arxiv.org/abs/2505.09461

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